onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

SiC MOSFETs are quickly proliferating in the power semiconductor market as some of the initial reliability concerns have been resolved and the price level has reached a very attractive point. As more devices become available in the market, it is important to understand both the commonalities and the differences with IGBTs so that the user can get the most out of each device. This paper provides an overview on the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. As part of the full wide bandgap ecosystem that onsemi offers, this article also provides a guideline on the usage of the NCP51705 an isolated gate driver for SiC MOSFETs.