The Difference Between GaN and SiC Transistors

For decades, silicon has dominated the transistor world, but that has been gradually changing. Compound semiconductors made of two or three materials have been developed and offer unique benefits and superior characteristics. For example, compound semiconductors gave us the light emitting diode (LED). One type is made up of a mix of Gallium Arsenide (GaAs) and Gallium Arsenide and Phosphorus (GaAsP) while others use indium and phosphorous.

The problem is that compound semiconductors are harder to make and more expensive, yet, they offer significant benefits over silicon. New, more demanding applications, such as automotive electrical systems and electric vehicles (EVs) are finding that compound semiconductors better meet their stringent specifications.

Two compound semiconductor devices that have emerged as solutions are Gallium Nitride (GaN) and Silicon Carbide (SiC) power transistors. These devices compete with the long−lived silicon power LDMOS MOSFETs and the super−junction MOSFETs. The GaN and SiC devices are similar in some ways but also have significant differences. This article compares the two and offers up some facts to help you make a decision for your next design.